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参数资料
| 型号： | NSDEMN11XV6T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/4页 |
| 文件大小： | 54K |
| 描述： | DIODE SWITCH QUAD CC 80V SOT563 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 10 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.2V @ 100mA |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 70V |
| 电流 - 平均整流 (Io)（每个二极管）： | 100mA（DC） |
| 电压 - (Vr)（最大）： | 80V |
| 反向恢复时间(trr)： | 4ns |
| 二极管类型： | 标准 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 2 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 剪切带 (CT) |
| 工具箱： | SMSIGDIODEA-KIT-ND - KIT SMALL SIGNAL DIODE DESIGN |
| 其它名称： | NSDEMN11XV6T1OSCT |
NSDEMN11XV6T1, NSDEMN11XV6T5
http://onsemi.com
4
PACKAGE DIMENSIONS
HE
DIM MIN NOM MAX
MILLIMETERS
A
0.50 0.55 0.60
b
0.17 0.22 0.27
C
D
1.50 1.60 1.70
E
1.10 1.20 1.30
e
0.5 BSC
L
0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT?563, 6 LEAD
CASE 463A?01
ISSUE F
e
0.08 (0.003)
M
X
Y
b
6 5 PL
A
C
?X?
?Y?
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
12 3
4
5
L
6
1.35
0.0531
0.5
0.0197
0.0197
SCALE 20:1
mm
inches
0.5
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18
0.003 0.005 0.007
ON Semiconductor
and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to mak
e changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800?282?9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81?3?5773?3850
NSDEMN11XV6T1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303?675?2175 or 800?344?3860 Toll Free USA/Canada
Fax: 303?675?2176 or 800?344?3867
Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NSDEMN11XV6T1G | 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad Common Cathode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| NSDEMN11XV6T5 | 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| NSDEMN11XV6T5G | 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad Common Cathode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| NSDEMP11XV6T1 | 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| NSDEMP11XV6T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Common Anode Quad Array Switching Diode |
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