- 您现在的位置：买卖IC网 > Datasheet目录137 > NSR0130P2T5G (ON Semiconductor)DIODE SCHOTTKY 30V 100MA SOD-923 Datasheet资料下载
参数资料
| 型号： | NSR0130P2T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 109K |
| 描述： | DIODE SCHOTTKY 30V 100MA SOD-923 |
| 产品变化通告： | Copper Wire Change 19/May/2010 |
| 产品目录绘图： | Rectifier SOD-923 Pkg |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 100mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 525mV @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 3µA @ 30V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-923 |
| 供应商设备封装： | SOD-923 |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | NSR0130P2T5GOSDKR |
              ? Semiconductor Components Industries, LLC, 2009 May, 2009 ? Rev. 1 1 Publication Order Number: NSR0130P2/D NSR0130P2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where space is limited. Features ? Extremely Fast Switching Speed ? Extremely Low Forward Voltage 0.385 V (max) @ IF = 10 mA ? Low Reverse Current ? This is a Pb?Free Device MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 100 mA Forward Current Surge Peak (60 Hz, 1 cycle) IFSM 1.0 A ESD Rating: Class 3B per Human Body Model ESD Rating: Class B per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board, (Note 1) TA = 25 °C Derate above 25°C PD 200 2.0 mW mW/°C Thermal Resistance, Junction?to?Ambient RJA 600 °C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +125 °C 1. FR?5 Minimum Pad. ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage (VR = 10 V) (VR = 30 V) IR ? ? ? ? 0.35 3.0 A Forward Voltage (IF = 10 mA) (IF = 100 mA) VF ? ? ? ? 0.385 0.525 Vdc 30 V SCHOTTKY BARRIER DIODE Device Package Shipping? ORDERING INFORMATION NSR0130P2T5G SOD?923 2 mm Pitch 8000/Tape & Reel 1 CATHODE 2 ANODE http://onsemi.com ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SOD?923 CASE 514AA PLASTIC L = Specific Device Code* (Character is rotated 270° clockwise) M = Month Code = Pb?Free Package (Note: Microdot may be in either location) MARKING DIAGRAM L M 1 2 12 |
相关PDF资料 |
PDF描述 |
|---|---|
| NSR0140M2T5G | DIODE SCHOTTKY 30MA 40V SOD-723 |
| NSR0140P2T5G | DIODE SCHOTTKY 40V 70MA SOD-923 |
| NSR0170P2T5G | DIODE SCHOTTKY 70V 70MA SOD-923 |
| NSR01F30NXT5G | DIODE SCHOTTKY 30V 100MA 2DSN |
| NSR01L30NXT5G | DIODE SCHOTTKY 30V 100MA 2DSN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NSR0130P2T5H | 制造商:ON Semiconductor 功能描述:SCHOTTKY DIODE 40V LOW VF LOW IR SOD923 |
| NSR013D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| NSR0140 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| NSR0140D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| NSR0140M2T5G | 功能描述:DIODE SCHOTTKY 30MA 40V SOD-723 RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
发布紧急采购，3分钟左右您将得到回复。