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参数资料
| 型号： | NSR01F30NXT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 45K |
| 描述： | DIODE SCHOTTKY 30V 100MA 2DSN |
| 标准包装： | 5,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 100mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 50µA @ 30V |
| 电容@ Vr, F： | 7pF @ 5V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-XFDFN |
| 供应商设备封装： | 2-DSN（0.60x0.30） |
| 包装： | 带卷 (TR) |
| 其它名称： | NSR01F30NXT5G-ND NSR01F30NXT5GOSTR |
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Semiconductor Components Industries, LLC, 2014
April, 2014 ? Rev. 3
1
Publication Order Number:
NSR01F30/D
NSR01F30NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current. The DSN2 (Dual Silicon
No?lead)
package is a chip level package using solderable metal
contacts under the package similar to DFN style packages. The DSN
style package enables 100% utilization of the package area for active
silicon, offering a significant performance per board area advantage
compared to products in plastic molded packages. The low thermal
resistance enables designers to meet the challenging task of achieving
higher efficiency and meeting reduced space requirements.
Features
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Very Low Forward Voltage Drop ? 370 mV @ 10 mA
?
Low Reverse Current ? 7.0 A @ 10 V VR
?
100 mA of Continuous Forward Current
?
ESD Rating ? Human Body Model: Class 3B
ESD Rating
? Machine Model: Class C
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Very High Switching Speed
?
Low Capacitance ? CT = 7 pF
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This is a Halide?Free Device
?
This is a Pb?Free Device
Typical Applications
?
LCD and Keypad Backlighting
?
Camera Photo Flash
?
Buck and Boost dc?dc Converters
?
Reverse Voltage and Current Protection
?
Clamping & Protection
Markets
?
Mobile Handsets
?
MP3 Players
?
Digital Camera and Camcorders
?
Notebook PCs & PDAs
?
GPS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
100
mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
4.0
A
ESD Rating: Human Body Model
Machine Model
ESD
>8.0
>400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
NSR01F30NXT5G DSN2
(Pb?Free)
5000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DSN2
(0201)
CASE 152AA
MARKING
DIAGRAM
PIN 1
V130 = Specific Device Code
YYY = Year Code
V130
YYY
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NSR01F30NXT5G_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| NSR01L30NXT5G | 功能描述:肖特基二极管与整流器 202 FC SCHOTTKY DIODES RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSR01L30NXT5G_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| NSR020A0X43-YZ | 功能描述:DC/DC转换器 4.5-13.8V 0.59-6V20A Pos SIP RoHS:否 制造商:Murata 产品: 输出功率: 输入电压范围:3.6 V to 5.5 V 输入电压（标称）: 输出端数量:1 输出电压（通道 1）:3.3 V 输出电流（通道 1）:600 mA 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:SMD/SMT 封装 / 箱体尺寸: |
| NSR020A0X43Z | 功能描述:DC/DC转换器 0.59-6Vout 20A SIP 4.5-13.8Vin RoHS:否 制造商:Murata 产品: 输出功率: 输入电压范围:3.6 V to 5.5 V 输入电压（标称）: 输出端数量:1 输出电压（通道 1）:3.3 V 输出电流（通道 1）:600 mA 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:SMD/SMT 封装 / 箱体尺寸: |
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