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参数资料
| 型号： | NSVR0240V2T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 118K |
| 描述： | DIODE SCHOTTKY 40V 250MA SOD523 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 250mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 700mV @ 200mA |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 3ns |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 40V |
| 电容@ Vr, F： | 4pF @ 5V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-79，SOD-523 |
| 供应商设备封装： | SOD-523 |
| 包装： | 带卷 (TR) |
             ? Semiconductor Components Industries, LLC, 2011 November, 2011 ? Rev. 2 1 Publication Order Number: NSR0240V2T1/D NSR0240V2T1G, NSVR0240V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc?dc converter, clamping and protection applications in portable devices. NSR0240V2 in a SOD?523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features ? Very Low Forward Voltage Drop ? 480 mV @ 100 mA ? Low Reverse Current ? 0.2 A @ 25 V VR ? 250 mA of Continuous Forward Current ? Power Dissipation of 200 mW with Minimum Trace ? Very High Switching Speed ? Low Capacitance ? CT = 4 pF ? AEC Qualified and PPAP Capable ? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? This is a Pb?Free Device* Typical Applications ? LCD and Keypad Backlighting ? Camera Photo Flash ? Buck and Boost dc?dc Converters ? Reverse Voltage and Current Protection ? Clamping & Protection Markets ? Mobile Handsets ? MP3 Players ? Digital Camera and Camcorders ? Notebook PCs & PDAs ? GPS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 Vdc Forward Continuous Current (DC) IF 250 mA Non?Repetitive Peak Forward Surge Current IFSM 2.0 A ESD Rating: Human Body Model Machine Model ESD Class 2 Class A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 40 VOLT SCHOTTKY BARRIER DIODE Device Package Shipping? ORDERING INFORMATION 1 CATHODE 2 ANODE NSR0240V2T1G SOD?523* (Pb?Free) 3,000 / Tape & Reel http://onsemi.com ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SOD?523 CASE 502 PLASTIC MARKING DIAGRAM 12 *This package is inherently Pb?Free. AC = Device Code M = Date Code* = Pb?Free Package *Date Code orientation position may vary depending upon manufacturing location. (Note: Microdot may be in either location) AC M NSVR0240V2T1G SOD?523* (Pb?Free) 3,000 / Tape & Reel |
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| NSVR0320MW2T1G | 功能描述:肖特基二极管与整流器 SMALL SIG SCHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVRB521S30T1G | 功能描述:肖特基二极管与整流器 SCHOTTKY DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVS-1059 | 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述: |
| NSVS-1089 | 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述: |
| NSVS-1093 | 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述: |
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