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参数资料
| 型号： | NSVRB521S30T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 113K |
| 描述： | DIODE SCHOTTKY 200MA 30V SOD523 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 200mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 30µA @ 10V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-79，SOD-523 |
| 供应商设备封装： | SOD-523 |
| 包装： | 带卷 (TR) |
              ? Semiconductor Components Industries, LLC, 2011 November, 2011 ? Rev. 8 1 Publication Order Number: RB521S30T1/D RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where space is limited. Features ? Extremely Fast Switching Speed ? Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA ? Low Reverse Current ? AEC Qualified and PPAP Capable ? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA Peak Forward Surge Current (Note 1) IFSM 1.0 A ESD Rating: Class 1C per Human Body Model ESD Rating: Class C per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 60 Hz for 1 cycle. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board, (Note 2) TA = 25 ?C Derate above 25?C PD 200 1.57 mW mW/?C Thermal Resistance, Junction?to?Ambient RJA 635 ?C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +125 ?C 2. FR?5 Minimum Pad. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 30 V SCHOTTKY BARRIER DIODE Device Package Shipping? ORDERING INFORMATION RB521S30T1G SOD?523 (Pb?Free) 3,000/Tape & Reel 4 mm Pitch 1 CATHODE 2 ANODE RB521S30T5G SOD?523 (Pb?Free) 8,000/Tape & Reel 2 mm Pitch http://onsemi.com ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SOD?523 CASE 502 MARKING DIAGRAM 5M M 12 5M = Device Code M = Date Code* = Pb?Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. NSVRB521S30T1G SOD?523 (Pb?Free) 3,000/Tape & Reel3,000/Tape & Reel 4 mm Pitch4 mm Pitch |
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