参数资料
型号: NTA7002NT1G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CH 30V 154MA SOT-416
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 154mA
开态Rds(最大)@ Id, Vgs @ 25° C: 7 欧姆 @ 154mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 100µA
输入电容 (Ciss) @ Vds: 20pF @ 5V
功率 - 最大: 300mW
安装类型: 表面贴装
封装/外壳: SC-75,SOT-416
供应商设备封装: SC-75,SOT-416
包装: 标准包装
其它名称: NTA7002NT1GOSDKR
NTA7002N, NVTA7002N
TYPICAL PERFORMANCE CURVES
0.2
0.18
0.16
0.14
V GS = 10 V
5V
2.8 V
2.4 V
T J = 25 ° C
2V
0.2
0.16
V DS = 5 V
0.12
0.1
0.08
0.12
0.08
0.06
0.04
0.02
0
0
0.4
0.8
1.2
1.6
1.4 V
1.2 V
2.0
0.04
0
0.6
0.8
T J = 125 ° C
T J = 25 ° C
1 1.2 1.4
T J = ? 55 ° C
1.6 1.8
2
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
2
V GS = 4.5 V
T J = 125 ° C
2.5
2
T J = 25 ° C
V GS = 2.5 V
1.5
1
0.5
T J = 25 ° C
T J = ? 55 ° C
1.5
1
0.5
V GS = 4.5 V
0
0.05
0.1
0.15
0.2
0
0.05
0.1
0.15
0.2
I D, DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance vs. Drain Current and
Temperature
I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2
1.8
1.6
I D = 0.15 A
V GS = 4.5 V
1000
V GS = 0 V
1.4
1.2
1
0.8
0.6
0.4
0.2
100
10
T J = 150 ° C
T J = 125 ° C
0
? 50
? 25
0
25
50
75
100
125
150
1
0
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
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