参数资料
型号: NTB125N02RG
厂商: ON Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 24V 15.9A D2PAK
产品变化通告: Product Discontinuation 03/Apr/2007
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 24V
电流 - 连续漏极(Id) @ 25° C: 15.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.6 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 28nC @ 4.5V
输入电容 (Ciss) @ Vds: 3440pF @ 20V
功率 - 最大: 1.98W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 管件
NTB125N02R, NTP125N02R
7000
6000
C iss
V DS = 0 V V GS = 0 V
10
5000
8.0
V GS
4000
C rss
6.0
3000
C iss
4.0
Q 1
Q T
Q 2
2000
1000
0
T J = 25 ° C
C oss
C rss
2.0
0
I D = 40 A
T J = 25 ° C
10
5
0
5
10
15
20
0
8
16
24
32
40
48
V GS
V DS
Q g , TOTAL GATE CHARGE (nC)
GATE?TO?SOURCE OR DRAIN?TO?SOURCE VOLTAGE (VOLTS)
1000
Figure 7. Capacitance Variation
60
Figure 8. Gate?to?Source and
Drain?to?Source Voltage versus Total Charge
100
V DS = 10 V
I D = 40 A
V GS = 10 V
t r
t d(off)
t f
50
40
30
20
10
V GS = 0 V
T J = 25 ° C
10
1
t d(on)
10
100
0
0
0.2
0.4
0.6
0.8
1.0
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1000
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
100
10
R DS(on) Limit
Thermal Limit
V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
100 m s
1 ms
10 ms
dc
1.0
Package Limit
0.1
1.0
10
100
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
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