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参数资料
| 型号： | NTB125N02RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 15.9A D2PAK |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.6 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3440pF @ 20V |
| 功率 - 最大： | 1.98W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
| 其它名称： | NTB125N02RT4GOS |
NTB125N02R, NTP125N02R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 3)
(V GS = 0 V dc , I D = 250 m A dc )
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 V dc , V GS = 0 V dc )
(V DS = 20 V dc , V GS = 0 V dc , T J = 125 ° C)
Gate?Body Leakage Current
(V GS = ± 20 V dc , V DS = 0 V dc )
V (BR)DSS
I DSS
I GSS
25
?
?
?
?
28
15
?
?
?
?
?
1.5
10
± 100
V dc
mV/ ° C
m A dc
nA dc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m A dc )
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.5
5.0
2.0
?
V dc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 3)
R DS(on)
m W
(V GS = 10 V dc , I D = 110 A dc )
(V GS = 4.5 V dc , I D = 55 A dc )
(V GS = 10 V dc , I D = 20 A dc )
(V GS = 4.5 V dc , I D = 20 A dc )
Forward Transconductance (Note 3)
(V DS = 10 V dc , I D = 15 A dc )
g FS
?
?
?
?
?
3.7
4.9
3.7
4.7
44
?
?
4.6
6.2
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
2710
3440
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 V dc , V GS = 0 V, f = 1 MHz)
C oss
C rss
?
?
1105
227
1670
640
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
?
11
22
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V GS = 10 V dc , V DD = 10 V dc ,
I D = 40 A dc , R G = 3 W )
t r
t d(off)
tf
?
?
?
39
27
21
80
40
40
Gate Charge
(V GS = 4.5 V dc , I D = 40 A dc ,
V DS = 10 V dc ) (Note 3)
Q T
Q 1
Q 2
?
?
?
23.6
5.1
11
28
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
(I S = 20 A dc , V GS = 0 V dc ) (Note 3)
V SD
?
0.82
1.2
V dc
(I S = 55 A dc , V GS = 0 V dc )
(I S = 20 A dc , V GS = 0 V dc , T J = 125 ° C)
?
?
0.99
0.65
?
?
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 30 A dc , V GS = 0 V dc ,
dI S /dt = 100 A/ m s) (Note 3)
t rr
t a
t b
Q RR
?
?
?
?
36.5
17.7
18.8
0.024
?
?
?
?
ns
m C
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
NTP125N02R
NTP125N02RG
NTB125N02R
NTB125N02RG
NTB125N02RT4
NTB125N02RT4G
Device
Package
TO?220AB
TO?220AB
(Pb?Free)
D 2 PAK
D 2 PAK
(Pb?Free)
D 2 PAK
D 2 PAK
Shipping ?
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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