参数资料
型号: NTB125N02RT4G
厂商: ON Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 24V 15.9A D2PAK
产品变化通告: Product Obsolescence 13/Apr/2009
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 24V
电流 - 连续漏极(Id) @ 25° C: 15.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.6 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 28nC @ 4.5V
输入电容 (Ciss) @ Vds: 3440pF @ 20V
功率 - 最大: 1.98W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
其它名称: NTB125N02RT4GOS
NTB125N02R, NTP125N02R
200
200
160
4.0 V
4.5 V
3.5 V
160
V DS ≥ 10 V
5.0 V
120
6.0 V
8.0 V
3.0 V
120
10 V
80
80
T J = 125 ° C
40
V GS = 2.5 V
40
T J = 25 ° C
T J = ?55 ° C
0
0
0
2
4
6
8
10
0
0.8
1.6
2.4
3.2
4.0
0.01
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
V GS = 10 V
0.01
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
V GS = 4.5 V
0.008
0.006
0.004
0.002
T J = 125 ° C
T J = 25 ° C
T J = ?55 ° C
0.008
0.006
0.004
0.002
T J = 125 ° C
T J = 25 ° C
T J = ?55 ° C
0
40
80
120
160
200
0
40
80
120
160
200
1.8
I D , DRAIN CURRENT (AMPS)
Figure 3. On?Resistance versus Drain Current
and Temperature
I D = 55 A
100,000
I D , DRAIN CURRENT (AMPS)
Figure 4. On?Resistance versus Drain Current
and Temperature
V GS = 0 V
1.6
V GS = 4.5 V
10,000
T J = 150 ° C
1.4
1.2
1.0
1000
T J = 125 ° C
T J = 100 ° C
100
0.8
0.6
10
?50
?25
0
25
50
75
100
125
150
0
4.0
8.0
12
16
20
24
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain?to?Source Leakage Current
versus Voltage
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