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参数资料
| 型号： | NTB13N10T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 13A D2PAK |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 165 毫欧 @ 6.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 64.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
| 其它名称： | NTB13N10T4GOS |
NTB13N10
Power MOSFET
100 V, 13 A, N?Channel
Enhancement?Mode D 2 PAK
Features
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
http://onsemi.com
?
?
?
?
Fast Recovery Diode
Avalanche Energy Specified
I DSS and R DS(on) Specified at Elevated Temperature
Mounting Information Provided for the D 2 PAK Package
Pb?Free Packages are Available
V (BR)DSS
100 V
R DS(on) TYP
165 m W @ 10 V
N?Channel
I D MAX
13 A
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
D
S
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
100
Unit
V
Drain?to?Source Voltage (R GS = 1.0 M W )
V DGR
100
V
4
D 2 PAK
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p v 10 ms)
V GS
V GSM
" 20
" 30
V
1
2
3
CASE 418AA
STYLE 2
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Pulsed (Note 1)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 V, V GS = 10 V, I L(pk) = 13 A,
L = 1.0 mH, R G = 25 W )
I D
I D
I DM
P D
T J , T stg
E AS
13
8.0
39
64.7
0.43
?55 to
+175
85
A
W
W/ ° C
° C
mJ
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
13N10G
AYWW
Thermal Resistance
° C/W
? Junction?to?Case
R q JC
2.32
1
2
3
Maximum Lead Temperature for Soldering
Purposes, (1/8 ″ from case for 10 s)
T L
260
° C
Gate
Drain
Source
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
13N10
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 6
1
Publication Order Number:
NTB13N10/D
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