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| 型号： | NTB18N06T4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 15A D2PAK |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 Product Discontinuation 03/Apr/2007 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 450pF @ 25V |
| 功率 - 最大： | 48.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
| 其它名称： | NTB18N06T4OS |
NTP18N06, NTB18N06
Power MOSFET
15 A, 60 V, N?Channel TO?220 & D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
N?Channel
D
http://onsemi.com
?
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Pb?Free Packages are Available
G
S
V (BR)DSS
60 V
4
R DS(on) TYP
90 m W @ 10 V
I D MAX
15 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
4
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
1
2
3
Drain?to?Gate Voltage (R GS = 10 m W )
V DGR
60
Vdc
TO?220AB
D 2 PAK
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p v
10 ms)
V GS
" 20
" 30
Vdc
1
2
3
CASE 221A
STYLE 5
CASE 418AA
STYLE 2
Drain Current
? Continuous @ T C = 25 ° C
? Continuous @ T C = 100 ° C
? Single Pulse (t p v 10 m s)
I D
I D
I DM
15
8.0
45
Adc
Adc
A pk
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
P D
T J , T stg
48.4
0.32
?55 to
W
W/ ° C
° C
4
Drain
4
Drain
+175
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc, V DS = 60 Vdc,
I L(pk) = 11 A, L = 1.0 mH, R G = 25 W )
E AS
61
mJ
NTx18N06G
AYWW
NTx
18N06G
AYWW
Thermal Resistance
? Junction?to?Case
R q JC
3.1
° C/W
1
Gate
3
Source
1
Gate
2
Drain
3
Source
? Junction?to?Ambient
R q JA
72.5
2
Maximum Lead Temperature for Soldering
Purposes, (1/8 ″ from case for 10 s)
T L
260
° C
Drain
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NTx18N06
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 4
1
Publication Order Number:
NTP18N06/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB18N06T4G | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB22N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB22N06L | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 22A 3-Pin(2+Tab) D2PAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB22N06LT4 | 功能描述:MOSFET N-CH 60V 22A D2PAK-3 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTB22N06T4 | 功能描述:MOSFET N-CH 60V 22A D2PAK-3 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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