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参数资料
| 型号： | NTB35N15T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 37A D2PAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 37A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 18.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3200pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTB35N15T4GOSCT |
NTB35N15
Power MOSFET
37 Amps, 150 Volts
N?Channel Enhancement?Mode D 2 PAK
Features
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Avalanche Energy Specified
? I DSS and R DS(on) Specified at Elevated Temperature
? Mounting Information Provided for the D 2 PAK Package
? Pb?Free Packages are Available
Typical Applications
http://onsemi.com
37 AMPERES, 150 VOLTS
50 m W @ V GS = 10 V
N?Channel
D
? PWM Motor Controls
? Power Supplies
? Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
V DSS
150
Vdc
4
Drain?to?Source Voltage (R GS = 1.0 M W )
V DGR
150
Vdc
4
Drain
Gate?to?Source Voltage
Vdc
? Continuous
? Non?Repetitive (t p v 10 ms)
V GS
V GSM
" 20
" 40
1
2
3
35N15G
AYWW
Drain Current ? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Pulsed (Note 2)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
I D
I D
I DM
P D
37
23
111
178
1.43
2.0
Adc
W
W/ ° C
W
D 2 PAK
CASE 418B
STYLE 2
1
Gate
2
Drain
3
Source
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
T J , T stg
E AS
?55 to
+150
700
° C
mJ
35N15
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
(V DD = 100 Vdc, V GS = 10 Vdc,
I L(pk) = 21.6 A, L = 3.0 mH, R G = 25 W )
ORDERING INFORMATION
Thermal Resistance
? Junction?to?Case
? Junction?to?Ambient
? Junction?to?Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
R q JC
R q JA
R q JA
T L
0.7
62.5
50
260
° C/W
° C
Device
NTB35N15
NTB35N15G
Package
D 2 PAK
D 2 PAK
(Pb?Free)
Shipping ?
50 Units/Rail
50 Units/Rail
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
NTB35N15T4
NTB35N15T4G
D 2 PAK
D 2 PAK
800 Tape & Reel
800 Tape & Reel
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in 2 ).
2. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 5
1
Publication Order Number:
NTB35N15/D
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