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参数资料
| 型号： | NTB5411NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 80A D2PAK |
| 产品变化通告： | Product Obsolescence 08/Apr/2011 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4500pF @ 25V |
| 功率 - 最大： | 166W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
NTB5411N, NTP5411N
Power MOSFET
80 Amps, 60 Volts
N-Channel D 2 PAK, TO-220
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? These are Pb ? Free Devices
Applications
? LED Lighting and LED Backlight Drivers
? DC ? DC Converters
? DC Motor Drivers
? Power Supplies Secondary Side Synchronous Rectification
V (BR)DSS
60 V
http://onsemi.com
R DS(ON) MAX
10 m W @ 10 V
N ? Channel
D
I D MAX
(Note 1)
80 A
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
60
$ 20
Unit
V
V
G
S
Gate ? to ? Source Voltage ? Nonrepetitive
(T P < 10 m s)
Continuous Drain Steady T C = 25 ° C
Current R q JC State
(Note 1) T C = 100 ° C
Power Dissipation Steady T C = 25 ° C
R q JC (Note 1) State
V GS
I D
P D
$ 30
80
61
166
V
A
W
4
TO ? 220AB
1
2
3
D 2 PAK
4
Pulsed Drain Current t p = 10 m s
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 V dc , V GS = 10 V dc , I L(pk) = 75 A,
L = 0.1 mH, R G = 25 W )
I DM
T J , T stg
I S
E AS
185
? 55 to
175
75
280
A
° C
A
mJ
1
2
3
CASE 221A CASE 418B
STYLE 5 STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
Drain
1
3
Gate
Source
Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction ? to ? Case (Drain) Steady State R q JC 0.9 ° C/W
(Note 1)
R q JA 43
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
1
Gate
NTP
5411NG
AYWW
2
Drain
3
Source
G
A
Y
WW
NTB
5411NG
AYWW
2
Drain
= Pb ? Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2009
October, 2009 ? Rev. 2
1
Publication Order Number:
NTB5411N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTB5412NT4G | MOSFET N-CH 60V 60A D2PAK |
| NTB5426NT4G | MOSFET N-CH 60V 120A D2PAK |
| NTB5605T4G | MOSFET P-CH 60V 18.5A D2PAK |
| NTB6410ANG | MOSFET N-CH 100V 76A D2PAK |
| NTB6411ANG | MOSFET N-CH 100V 72A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB5412N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220 |
| NTB5412NT4G | 功能描述:MOSFET NFET D2PAK 60V 60A 14.0mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5426N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220 |
| NTB5426NT4G | 功能描述:MOSFET 60V, 4.5mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5605P | 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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