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参数资料
| 型号： | NTB75N03-6T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 75A D2PAK |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.5 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 5635pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
NTP75N03?06, NTB75N03?06
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ?Source Breakdown Voltage (Note 2)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Negative)
V (BR)DSS
30
?
?57
?
?
Vdc
mV ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 30 Vdc, V GS = 0 Vdc)
(V DS = 30 Vdc, V GS = 0 Vdc, T J = 150 ° C)
?
?
?
?
1.0
10
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.6
?6
2.0
?
Vdc
mV ° C
Static Drain?to?Source On?Resistance (Note 2)
R DS(on)
m W
(V GS = 10 Vdc, I D = 37.5 Adc)
Static Drain?to?Source On Resistance (Note 2)
(V GS = 10 Vdc, I D = 75 Adc)
(V GS = 10 Vdc, I D = 37.5 Adc, T J = 125 ° C)
V DS(on)
?
?
?
5.3
0.53
0.35
6.5
0.68
0.50
Vdc
Forward Transconductance (Notes 2 & 4) (V DS = 3 Vdc, I D = 20 Adc)
g FS
?
58
?
Mhos
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance
C iss
?
4398
5635
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0,
f = 1.0 MHz)
C oss
C rss
?
?
1160
317
1894
430
SWITCHING CHARACTERISTICS (Notes 3 and 4)
Turn?On Delay Time
t d(on)
?
16
30
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V GS = 5.0 Vdc,
V DD = 20 Vdc, I D = 75 Adc,
R G = 4.7 W ) (Note 2)
t r
t d(off)
t f
?
?
?
130
65
105
200
110
175
Gate Charge
(V GS = 5.0 Vdc,
I D = 75 Adc,
V DS = 24 Vdc) (Note 2)
Q T
Q 1
Q 2
?
?
?
57
11
34
75
15
50
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
(I S = 75 Adc, V GS = 0 Vdc)
(I S = 75 Adc, V GS = 0 Vdc, T J = 125 ° C)
V SD
?
?
1.19
1.09
1.25
?
Vdc
(Note 2)
Reverse Recovery Time
(Note 4)
Reverse Recovery Stored
Charge (Note 4)
(I S = 75 Adc, V GS = 0 Vdc
dl S /dt = 100 A/ m s) (Note 2)
t rr
t a
t b
Q RR
?
?
?
?
37
20
17
0.023
?
?
?
?
ns
m C
2. Pulse Test: Pulse Width v 300 m S, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.
http://onsemi.com
3
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| NTB75N03L09 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N03L09G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| NTB75N03L09T4 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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