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参数资料
| 型号： | NTB75N03-6G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 75A D2PAK |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.5 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 5635pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTP75N03?06,
NTB75N03?06
Power MOSFET
75 Amps, 30 Volts
N?Channel TO?220 and D 2 PAK
http://onsemi.com
This 20 V GS gate drive vertical Power MOSFET is a general
purpose part that provides the “best of design” available today in a low
cost power package. This power MOSFET is designed to withstand
high energy in the avalanche and commutation modes. The
Drain?to?Source Diode has a fast response with soft recovery.
V (BR)DSS
30 V
R DS(on) TYP
5.3 m W @ 10 V
I D MAX
75 A
Features
?
?
?
?
?
?
?
Ultra?Low R DS(on) , Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperatures
High Avalanche Energy Capability
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Pb?Free Packages are Available
1
2
3
4
TO?220AB
CASE 221A
STYLE 5
1
4
2
3
D 2 PAK
CASE 418AA
STYLE 2
Typical Applications
?
?
?
?
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTP1306 and MTB1306
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
N?Channel
D
75N
03?06G
AYWW
75N
03?06G
AYWW
G
1
Gate
3
Source
1
Gate
2
Drain
3
Source
S
2
Drain
N75N03?06
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 6
1
Publication Order Number:
NTP75N03?06/D
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| NTB65N02R | MOSFET N-CH 25V 7.6A D2PAK |
| NTB60N06LG | MOSFET N-CH 60V 60A D2PAK |
| NTB60N06L | MOSFET N-CH 60V 60A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB75N03-6T4G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N03L09 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N03L09G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N03L09G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTB75N03L09T4 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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