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参数资料
| 型号： | NTB75N03-6G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 75A D2PAK |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.5 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 5635pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTP75N03?06, NTB75N03?06
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Drain?to?Gate Voltage (RGS = 10 M W )
Gate?to?Source Voltage ? Continuous
Non?repetitive (tp ≤ 10 ms)
Drain Current
? Continuous @ T C = 25 ° C
? Continuous @ T C = 100 ° C
? Single Pulse (tp ≤ 10 m s)
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche Energy ? Starting T J = 25 ° C
Symbol
V DSS
V DGB
V GS
V GS
I D
I D
I DM
P D
T J and T stg
E AS
Value
30
30
± 20
± 24
75
59
225
125
1.0
2.5
?55 to 150
1500
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
W
W/ ° C
W
° C
mJ
(V DD = 38 Vdc, V GS = 10 Vdc, L = 1 mH, I L (pk) = 55 A, V DS = 40 Vdc)
Thermal Resistance
? Junction?to?Case
? Junction?to?Ambient
? Junction?to?Ambient (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds
R q JC
R q JA
R q JA
T L
1.0
62.5
50
260
° C/W
° C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
NTP75N03?06
NTP75N03?06G
NTB75N03?06
NTB75N03?06G
NTB75N03?06T4
NTB75N03?06T4G
Device
Package
TO?220
TO?220
(Pb?Free)
D 2 PAK
D 2 PAK
(Pb?Free)
D 2 PAK
D 2 PAK
Shipping ?
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB75N03-6T4G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N03L09 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N03L09G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N03L09G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTB75N03L09T4 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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