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| 型号： | NTB85N03G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 28V 85A D2PAK |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 28V |
| 电流 - 连续漏极(Id) @ 25° C： | 85A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.8 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2150pF @ 24V |
| 功率 - 最大： | 80W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTP85N03, NTB85N03
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 2)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 28 Vdc, V GS = 0 Vdc)
(V DS = 28 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
28
?
?
?
?
30.6
25
?
?
?
?
?
1.0
10
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain?to?Source On?Resistance (Note 2)
(V GS = 10 Vdc, I D = 40 Adc)
(V GS = 4.5 Vdc, I D = 40 Adc)
(V GS = 10 Vdc, I D = 10 Adc)
Forward Transconductance (Note 2) (V DS = 15 Vdc, I D = 10 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
?
?
1.9
?3.8
6.1
9.2
7.0
20
3.0
?
6.8
?
?
?
Vdc
mV/ ° C
m W
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
2150
?
pF
Output Capacitance
Transfer Capacitance
(V DS = 24 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
680
260
?
?
SWITCHING CHARACTERISTICS (Note 3)
Turn?On Delay Time
t d(on)
?
10
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 15 Adc,
V GS = 10 Vdc, R G = 3.3 W )
t r
t d(off)
t f
?
?
?
22
32
30
?
?
?
Gate Charge
(V DS = 24 Vdc, I D = 40 Adc,
V GS = 4.5 Vdc) (Note 2)
Q T
Q 1
Q 2
?
?
?
29
8.0
18
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
Reverse Recovery Time
(I S = 2.3 Adc, V GS = 0 Vdc)
(I S = 40 Adc, V GS = 0 Vdc) (Note 2)
(I S = 2.3 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 2.3 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 2)
V SD
t rr
t a
?
?
?
?
?
0.75
1.2
0.65
39
21
1.0
?
?
?
?
Vdc
ns
t b
?
18
?
Reverse Recovery Stored Charge
Q RR
?
0.043
?
m C
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
NTP85N03
NTP85N03G
NTB85N03
NTB85N03G
NTB85N03T4
NTB85N03T4G
Device
Package
TO?220AB
TO?220AB
(Pb?Free)
D 2 PAK
D 2 PAK
(Pb?Free)
D 2 PAK
D 2 PAK
Shipping ?
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB85N03T4 | 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB85N03T4G | 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB8N50 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB90N02 | 功能描述:MOSFET 28V 90A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB90N02_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 90 Amps, 24 Volts |
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