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参数资料
| 型号： | NTD14N03RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 2.5A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.8nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 115pF @ 20V |
| 功率 - 最大： | 1.04W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | NTD14N03RT4GOSDKR |
NTD14N03R, NVD14N03R
Power MOSFET
14 Amps, 25 Volts
N ? Channel DPAK
Features
? Planar HD3e Process for Fast Switching Performance
? Low R DS(on) to Minimize Conduction Loss
? Low C iss to Minimize Driver Loss
? Low Gate Charge
? Optimized for High Side Switching Requirements in
High ? Efficiency DC ? DC Converters
? NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
http://onsemi.com
14 AMPERES, 25 VOLTS
R DS(on) = 70.4 m W (Typ)
N ? CHANNEL
D
?
Qualified and PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
G
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
25
Unit
Vdc
4
4
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ? Junction ? to ? Case
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C, Chip
? Continuous @ T A = 25 ° C, Limited by Package
? Single Pulse (tp ≤ 10 m s)
Thermal Resistance, Junction ? to ? Ambient
(Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
V GS
R q JC
P D
I D
I D
I D
R q JA
P D
I D
± 20
6.0
20.8
14
11.4
28
80
1.56
3.1
Vdc
° C/W
W
A
A
A
° C/W
W
A
1 2
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
1
2
3
CASE 369D
DPAK ? 3
(Straight Lead)
STYLE 2
Thermal Resistance, Junction ? to ? Ambient
(Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JA
P D
I D
120
1.04
2.5
° C/W
W
A
MARKING DIAGRAM
& PIN ASSIGNMENTS
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
T J , T stg
T L
? 55 to
150
260
° C
° C
4 Drain
4 Drain
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
1
Gate
Y
WW
3
2
Drain
= Year
= Work Week
1
Gate
2
Drain
3
Source
14N03
G
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
February, 2012 ? Rev. 7
1
Publication Order Number:
NTD14N03R/D
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