参数资料
型号: NTD15N06LT4
厂商: ON Semiconductor
文件页数: 8/8页
文件大小: 0K
描述: MOSFET N-CH 60V 15A DPAK
产品变化通告: Product Discontinuation 31/Mar/2005
标准包装: 2,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 100 毫欧 @ 7.5A,5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 5V
输入电容 (Ciss) @ Vds: 440pF @ 25V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: DPAK-3
包装: 带卷 (TR)
其它名称: NTD15N06LT4OS
NTD15N06L
V
B
R
C
DPAK ? 3 (SINGLE GAUGE)
CASE 369D ? 01
ISSUE B
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
S
? T ?
SEATING
PLANE
1
4
2
3
A
K
Z
DIM
A
B
C
D
E
F
G
H
J
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
2.29 BSC
0.87 1.01
0.46 0.58
F
G
J
D 3 PL
0.13 (0.005)
M
T
H
K 0.350 0.380
R 0.180 0.215
S 0.025 0.040
V 0.035 0.050
Z 0.155 ???
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
8.89 9.65
4.45 5.45
0.63 1.01
0.89 1.27
3.93 ???
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NTD15NO6L/D
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