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参数资料
| 型号： | NTD18N06LT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 18A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 9A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 675pF @ 25V |
| 功率 - 最大： | 55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | NTD18N06LT4GOSDKR |
NTD18N06L, NTDV18N06L
Power MOSFET
18 A, 60 V, Logic Level N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Features
? AEC Q101 Qualified ? NTDV18N06L
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
60 V
R DS(on) TYP
54 m W@ 5.0 V
I D MAX
18 A
(Note 1)
Typical Applications
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
N ? Channel
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p v 10 ms)
Symbol
V DSS
V DGR
V GS
V GS
Value
60
60
" 15
" 20
Unit
Vdc
Vdc
Vdc
S
MARKING
DIAGRAMS
4
Drain
1
3
Gate
Source
3
Drain Current
? Continuous @ T A = 25 ° C I D 18 Adc
? Continuous @ T A = 100 ° C I D 10
? Single Pulse (t p v 10 m s) I DM 54 Apk
Total Power Dissipation @ T A = 25 ° C P D 55 W
Derate above 25 ° C 0.36 W/ ° C
Total Power Dissipation @ T A = 25 ° C (Note 2) 2.1 W
Operating and Storage Temperature Range T J , T stg ? 55 to ° C
+175
Single Pulse Drain ? to ? Source Avalanche E AS 72 mJ
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 5.0 Vdc,
L = 1.0 mH, I L (pk) = 12 A, V DS = 60 Vdc)
Thermal Resistance ° C/W
? Junction ? to ? Case R q JC 2.73
? Junction ? to ? Ambient (Note 1) R q JA 100
? Junction ? to ? Ambient (Note 2) R q JA 71.4
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses above
the Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR ? 4 board using the minimum recommended
pad size.
2. When surface mounted to an FR ? 4 board using the 0.5 sq in drain pad size.
4
DPAK
CASE 369C
1 2 STYLE 2
3
2
Drain
4
Drain
4
DPAK ? 3
CASE 369D
STYLE 2
1
2
1 2 3
Gate Drain Source
18N6L = Device Code
Y = Year
WW = Work Week
G = Pb ? Free Device
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 6
1
Publication Order Number:
NTD18N06L/D
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相关代理商/技术参数 |
参数描述 |
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| NTD18N06T4 | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD18N06T4G | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20 | 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
| NTD20N03L27 | 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N03L27/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 20 Amps， 30 Volts |
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