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| 型号： | NTD18N06LT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 18A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 9A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 675pF @ 25V |
| 功率 - 最大： | 55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | NTD18N06LT4GOSDKR |
NTD18N06L, NTDV18N06L
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
60
?
?
?
?
70
57.6
?
?
?
?
?
1.0
10
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 Vdc, I D = 9.0 Adc)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 Vdc, I D = 18 Adc)
(V GS = 5.0 Vdc, I D = 9.0 Adc, T J = 150 ° C)
Forward Transconductance (Note 3) (V DS = 7.0 Vdc, I D = 9.0 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
1.0
?
?
?
?
?
1.8
5.2
54
1.0
0.86
13.5
2.0
?
65
1.3
?
?
Vdc
mV/ ° C
m W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
482
166
56
675
230
80
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Gate Charge
(V DD = 30 Vdc, I D = 18 Adc,
V GS = 5.0 Vdc,
R G = 9.1 W ) (Note 3)
(V DS = 48 Vdc, I D = 18 Adc,
V GS = 5.0 Vdc) (Note 3)
t d(on)
t r
t d(off)
t f
Q T
Q 1
Q 2
?
?
?
?
?
?
?
9.9
79
19
38
11
3.2
6.5
20
160
40
80
22
?
?
ns
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 18 Adc, V GS = 0 Vdc) (Note 3)
(I S = 18 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 18 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.94
0.83
41
26
15
0.057
1.15
?
?
?
?
?
Vdc
ns
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
NTD18N06LT4G
NTDV18N06LT4G
Device
Package
DPAK
(Pb ? Free)
DPAK
(Pb ? Free)
Shipping ?
2500 / Tape & Reel
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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