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参数资料
| 型号： | NTD20N03L27T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 20A DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 27 毫欧 @ 10A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1260pF @ 25V |
| 功率 - 最大： | 1.75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTD20N03L27T4GOSDKR |
NTD20N03L27,
NVD20N03L27
Power MOSFET
20 Amps, 30 Volts, N ? Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain ? to ? source diode has a ideal fast but soft recovery.
Features
? Ultra ? Low R DS(on) , Single Base, Advanced Technology
? SPICE Parameters Available
? Diode is Characterized for use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperatures
? High Avalanche Energy Specified
? ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
? AEC Q101 Qualified ? NVD20N03L27
? These Devices are Pb ? Free and are RoHS Compliant
Typical Applications
? Power Supplies
? Inductive Loads
? PWM Motor Controls
? Replaces MTD20N03L in many Applications
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol Value Unit
http://onsemi.com
20 A, 30 V, R DS(on) = 27 m W
N ? Channel
D
G
S
MARKING
DIAGRAMS
4
Drain
4 DPAK
CASE 369C
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
V DSS
V DGR
V GS
V GS
30
30
" 20
" 24
Vdc
Vdc
Vdc
1 2
3
STYLE 2
1
Gate
2
Drain
3
Source
Drain Current
? Continuous @ T A = 25 _ C
? Continuous @ T A = 100 _ C
? Single Pulse (t p v 10 m s)
I D
I D
I DM
20
16
60
Adc
Apk
20N3L
Y
WW
= Device Code
= Year
= Work Week
Total Power Dissipation @ T A = 25 _ C
Derate above 25 ° C
Total Power Dissipation @ T C = 25 ° C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 30 Vdc, V GS = 5 Vdc, L = 1.0 mH,
I L(pk) = 24 A, V DS = 34 Vdc)
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
? Junction ? to ? Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
P D
T J , T stg
E AS
R q JC
R q JA
R q JA
T L
74
0.6
1.75
? 55 to
150
288
1.67
100
71.4
260
W
W/ ° CW
° C
mJ
° C/W
° C
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 5
1
Publication Order Number:
NTD20N03L27/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD20N03L27T4G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 20V 20A D-PAK |
| NTD20N03L27T4G-CUT TAPE | 制造商:ON 功能描述:NTD Series N-Channel 30 V 27 mOhm 74 W Tab Mount Power MOSFET - TO-252 |
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| NTD20N06/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 20 Amps， 60 Volts |
| NTD20N06-001 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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