参数资料
型号: NTD3055-150T4G
厂商: ON Semiconductor
文件页数: 6/7页
文件大小: 0K
描述: MOSFET N-CH 60V 9A DPAK
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 150 毫欧 @ 4.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 10V
输入电容 (Ciss) @ Vds: 280pF @ 25V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: DPAK-3
包装: 标准包装
其它名称: NTD3055-150T4GOSDKR
NTD3055 ? 150, NVD3055 ? 150
PACKAGE DIMENSIONS
L3
1
E
b3
4
2
3
A
D
B
DETAIL A
A
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
C
c2
Z
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
INCHES
MILLIMETERS
L4
b2
e
b
0.005 (0.13)
M
C
c
L2
GAUGE
PLANE
L
L1
DETAIL A
ROTATED 90 5 CW
A1
H
C
SEATING
PLANE
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
MIN MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
??? 0.040
0.155 ???
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.76 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
??? 1.01
3.93 ???
SOLDERING FOOTPRINT*
6.20 3.00
0.244 0.118
2.58
0.102
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
1.60
0.063
6.17
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
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