参数资料
型号: NTD3055L104T4G
厂商: ON Semiconductor
文件页数: 4/9页
文件大小: 0K
描述: MOSFET N-CH 60V 12A DPAK
产品目录绘图: MOSFET DPAK Pkg
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 12A
开态Rds(最大)@ Id, Vgs @ 25° C: 104 毫欧 @ 6A,5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 5V
输入电容 (Ciss) @ Vds: 440pF @ 25V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: DPAK-3
包装: 标准包装
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: NTD3055L104T4GOSDKR
NTD3055L104, NTDV3055L104
TYPICAL CHARACTERISTICS
24
20
16
12
8
V GS = 10 V
8V
6V
5V
4.5 V
4V
3.5 V
24
20
16
12
8
V DS ≥ 10 V
T J = 25 ° C
4
0
0
1
2
3
4
5
6
7
3V
8
4
0
1
1.5
T J = 100 ° C
2 2.5
3
T J = ? 55 ° C
3.5 4
4.5
5
5.5
6
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
V GS = 5 V
T J = 100 ° C
T J = 25 ° C
T J = ? 55 ° C
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
V GS = 10 V
T J = 100 ° C
T J = 25 ° C
T J = ? 55 ° C
0
0
4
8
12
16
20
24
0
0
4
8
12
16
20
24
2
I D , DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus
Gate ? to ? Source Voltage
10,000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
1.8
1.6
1.4
1.2
1
0.8
0.6
I D = 6 A
V GS = 5 V
1000
100
10
1
V GS = 0 V
T J = 150 ° C
T J = 100 ° C
? 50 ? 25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
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