- 您现在的位置：买卖IC网 > PDF目录18017 > NTD4804NT4G (ON Semiconductor)MOSFET N-CH 30V 14.5A DPAK PDF资料下载
参数资料
| 型号： | NTD4804NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 14.5A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4490pF @ 12V |
| 功率 - 最大： | 1.43W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD4804NT4GOSDKR |
NTD4804N, NVD4804N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? TAB (Drain)
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? Steady State (Note 2)
Symbol
R q JC
R q JC ? TAB
R q JA
R q JA
Value
1.4
3.5
56.4
105
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
26
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
7.6
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 to 11.5 V
I D = 30 A
3.4
4.0
m W
I D = 15 A
3.4
V GS = 4.5 V
I D = 30 A
I D = 15 A
4.7
4.6
5.5
Forward Transconductance
gFS
V DS = 15 V, I D = 15 A
23
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 12 V
4490
952
556
pF
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V,
I D = 30 A
30
5.5
13
13
40
nC
Total Gate Charge
Q G(TOT)
V GS = 11.5 V, V DS = 15 V,
I D = 30 A
73
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
18
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
20
24
8
Turn ? On Delay Time
t d(on)
10
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 11.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
19
35
5
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| CD10ED300JO3F | CAP MICA 30PF 500V 5% RADIAL |
| FCP1913H563G | CAP FILM 0.056UF 50VDC 1913 |
| 160183K1000G-F | CAP FILM 0.018UF 1KVDC RADIAL |
| CD10ED300JO3 | CAP MICA 30PF 500V 5% RADIAL |
| CD5EC300JO3F | CAP MICA 30PF 300V 5% RADIAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4805N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK |
| NTD4805N-1G | 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4805N-35G | 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4805NT4G | 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4806N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK |
发布紧急采购，3分钟左右您将得到回复。