收藏本站
参数资料
型号： NTD4805NT4G
厂商： ON Semiconductor
文件页数： 1/8页
文件大小： 0K
描述： MOSFET N-CH 30V 12.7A DPAK
标准包装： 2,500
FET 型： MOSFET N 通道，金属氧化物
FET 特点： 逻辑电平门
漏极至源极电压(Vdss)： 30V
电流 - 连续漏极(Id) @ 25° C： 12.7A
开态Rds（最大）@ Id, Vgs @ 25° C： 5 毫欧 @ 30A，10V
Id 时的 Vgs(th)（最大）： 2.5V @ 250µA
闸电荷(Qg) @ Vgs： 26nC @ 4.5V
输入电容 (Ciss) @ Vds： 2865pf @ 12V
功率 - 最大： 1.41W
安装类型： 表面贴装
封装/外壳： TO-252-3，DPak（2 引线+接片），SC-63
供应商设备封装： D-Pak
包装： 带卷 (TR)
其它名称： NTD4805NT4G-ND
NTD4805NT4GOSTR
NTD4805N, NVD4805N
Power MOSFET
30 V, 88 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? AEC ? Q101 Qualified and PPAP Capable ? NVD4805N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
5.0 m W @ 10 V
7.4 m W @ 4.5 V
D
I D MAX
88 A
MAXIMUM RATINGS (T J = 25 ? C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Value
30
Unit
V
G
N ? Channel
Gate ? to ? Source Voltage
V GS
? 20
V
S
Power Dissipation
1 2
3
3
4
Continuous Drain
Current (R q JA ) (Note 1)
Power Dissipation
(R q JA ) (Note 1)
Continuous Drain
Current (R q JA ) (Note 2)
Steady
State
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Power Dissipation
(R q JC ) (Note 1)
Pulsed Drain Current    t p =10 m s
Current Limited by Package
T A = 25 ? C
T A = 85 ? C
T A = 25 ? C
T A = 25 ? C
T A = 85 ? C
T A = 25 ? C
T C = 25 ? C
T C = 85 ? C
T C = 25 ? C
T A = 25 ? C
T A = 25 ? C
I D
P D
I D
P D
I D
P D
I DM
I DmaxPkg
17.4
13.5
2.65
12.7
9.8
1.41
95
73
79
175
45
A
W
A
W
A
W
A
A
4
4
1
2
CASE 369AA CASE 369D
DPAK IPAK
(Bent Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
175
55
? C
A
1
2
3
Source Current (Body Diode) Pulsed t p =20 m s I SM 175 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain ? to ? Source Avalanche E AS 288 mJ
Energy (V DD = 24 V, V GS = 10 V,
L = 1.0 mH, I L(pk) = 24 A, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ? C
(1/8 ? from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate Source
Gate Drain Source
Y = Year
WW = Work Week
4805N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
March, 2013 ? Rev. 7
1
Publication Order Number:
NTD4805N/D
相关PDF资料
PDF描述
AS13AW SW SLIDE SPDT .098" EXTENDED PC
FCP0805H101J CAP FILM 100PF 50VDC 0805
FN6660079 OSC 66.667MHZ 3.3V SMD
FN6660077 OSC 66.666MHZ 3.3V SMD
FN6660074 OSC 66.666MHZ 3.3V SMD
相关代理商/技术参数
参数描述
NTD4806N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
NTD4806N-1G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806N-1H 制造商:ON Semiconductor 功能描述:
NTD4806N-35G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806NA-1G 功能描述:MOSFET NFET DPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*