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参数资料
| 型号： | NTD4805NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 12.7A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2865pf @ 12V |
| 功率 - 最大： | 1.41W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
| 其它名称： | NTD4805NT4G-ND NTD4805NT4GOSTR |
NTD4805N, NVD4805N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? TAB (Drain)
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? Steady State (Note 2)
Symbol
R q JC
R q JC ? TAB
R q JA
R q JA
Value
1.9
3.5
56.6
106.6
Unit
? C/W
1. Surface ? mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
27
V
mV/ ? C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ? C
T J = 125 ? C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
5.86
2.5
V
mV/ ? C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 to
11.5 V
I D = 30 A
I D = 15 A
4.3
4.2
5.0
m W
V GS = 4.5 V
I D = 30 A
I D = 15 A
6.0
5.8
7.4
Forward Transconductance
g FS
V DS = 15 V, I D = 15 A
17
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 12 V
2865
610
338
pF
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V,
I D = 30 A
20.5
4.05
8.28
8.36
26
nC
Total Gate Charge
Q G(TOT)
V GS = 11.5 V, V DS = 15 V,
I D = 30 A
48
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
17.2
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
20.3
20.8
8.0
Turn ? On Delay Time
t d(on)
10.8
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 11.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
20.5
30.8
4.4
3. Pulse Test: Pulse Width ? 300 m s, Duty Cycle ? 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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