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| 型号： | NTD4806N-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 11A IPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2142pF @ 12V |
| 功率 - 最大： | 1.33W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD4806N, NVD4806N
Power MOSFET
30 V, 76 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? AEC ? Q101 Qualified and PPAP Capable ? NVD4806N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
6.0 m W @ 10 V
9.4 m W @ 4.5 V
D
I D MAX
76 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Value
30
Unit
V
G
N ? Channel
Gate ? to ? Source Voltage
V GS
" 20
V
S
1 2
3
2 3
Continuous Drain
Current (R q JA ) (Note 1)
Power Dissipation
(R q JA ) (Note 1)
Continuous Drain
Current (R q JA ) (Note 2)
Power Dissipation
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Power Dissipation
(R q JC ) (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
I D
P D
I D
P D
15.6
12
2.65
11.3
8.8
1.4
79
61
68
A
W
A
W
A
W
4
4
1
CASE 369AA CASE 369AD
DPAK IPAK
(Bent Lead) (Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Pulsed Drain Current t p =10 m s
Current Limited by Package
T A = 25 ° C
T A = 25 ° C
I DM
I DmaxPkg
150
45
A
A
4
Drain
4
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
175
50
° C
A
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 24 V, V GS = 10 V,
L = 1.0 mH, I L(pk) = 21 A, R G = 25 W )
dV/dt
E AS
6.0
220
V/ns
mJ
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
Y
WW
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4806N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 9
1
Publication Order Number:
NTD4806N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4806N-1H | 制造商:ON Semiconductor 功能描述: |
| NTD4806N-35G | 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4806NA-1G | 功能描述:MOSFET NFET DPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4806NA-35G | 功能描述:MOSFET NFET IPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4806NAT4G | 功能描述:MOSFET NFET DPAK 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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