参数资料
型号: NTD4813NHT4G
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: MOSFET N-CH 30V 40A DPAK
产品变化通告: Reactivation Notice 08/Apr/2011
Product Obsolescence 24/Jan/2011
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 10nC @ 4.5V
输入电容 (Ciss) @ Vds: 940pF @ 12V
功率 - 最大: 1.27W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 剪切带 (CT)
其它名称: NTD4813NHT4GOSCT
NTD4813NH, NVD4813NH
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? TAB (Drain)
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – Steady State (Note 2)
Symbol
R q JC
R q JC ? TAB
R q JA
R q JA
Value
4.25
3.5
77.5
118.5
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
30
24.5
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
5.4
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V to
11.5 V
V GS = 4.5 V
I D = 30 A
I D = 15 A
I D = 30 A
10.9
10.7
20.9
13
25.9
m W
I D = 15 A
18.5
Forward Transconductance
g FS
V DS = 15 V, I D = 10 A
6.7
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
940
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz, V DS = 12 V
V GS = 4.5 V, V DS = 15 V; I D = 30 A
V GS = 11.5 V, V DS = 15 V;
I D = 30 A
201
115
7.1
1.6
3.4
3.0
18.2
10
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
10
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V, I D = 15 A,
R G = 3.0 W
19.5
10.3
2.9
ns
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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