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| 型号： | NTD4815NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.9A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 15 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 770pF @ 12V |
| 功率 - 最大： | 1.26W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD4815N, NVD4815N
Power MOSFET
30 V, 35 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? AEC ? Q101 Qualified and PPAP Capable ? NVD4815N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? High Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
G
http://onsemi.com
R DS(ON) MAX
15 m W @ 10 V
25 m W @ 4.5 V
D
I D MAX
35 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
S
N ? CHANNEL MOSFET
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 85 ° C
I D
8.5
6.5
A
4
4
2 3
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
ID
P D
1.92
6.9
5.3
1.26
W
A
W
1 2
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1
CASE 369AC
3 IPAK
(Straight Lead)
Continuous Drain
Current R q JC
(Note 1)
T C = 25 ° C
T C = 85 ° C
I D
35
27
A
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
t p =10 m s
T C = 25 ° C
T A = 25 ° C
P D
I DM
32.6
87
W
A
4
Drain
4
Drain
Current Limited by Package
T A = 25 ° C
I DmaxPkg
35
A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 24 V, V GS = 10 V,
I L = 11 A pk , L = 1.0 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T J ,
T STG
I S
dV/dt
EAS
T L
? 55 to
+175
27
6
60.5
260
° C
A
V/ns
mJ
° C
2
1 Drain 3
Gate Source
Y
WW
4815N
G
1 2 3
Gate Drain Source
= Year
= Work Week
= Device Code
= Pb ? Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 7
1
Publication Order Number:
NTD4815N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4854N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK |
| NTD4854N-1G | 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4854N-35G | 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4854NT4G | 功能描述:MOSFET PWR MSFT 25V 124A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4854NT4H | 制造商:ON Semiconductor 功能描述: |
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