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| 型号： | NTD4863NAT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 9.2A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.3 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 990pF @ 12V |
| 功率 - 最大： | 1.27W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD4863N
Power MOSFET
25 V, 49 A, Single N--Channel, DPAK/IPAK
Features
?
Trench Technology
?
?
Low R DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
http://onsemi.com
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb--Free Devices
Applications
? VCORE Applications
? DC--DC Converters
V (BR)DSS
25 V
R DS(ON) MAX
9.3 m Ω @ 10 V
14 m Ω @ 4.5 V
D
I D MAX
49 A
? High Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
G
Parameter
Symbol
Value
Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
V DSS
V GS
25
± 20
V
V
S
N--CHANNEL MOSFET
2 3
3
3
Continuous Drain
Current R θ JA
(Note 1)
Power Dissipation
R θ JA (Note 1)
Continuous Drain
Current R θ JA
(Note 2)
Power Dissipation
R θ JA (Note 2)
Continuous Drain
Current R θ JC
(Note 1)
Power Dissipation
R θ JC (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
ID
P D
I D
P D
11.3
8.8
1.95
9.2
7.1
1.27
49
38
36.6
A
W
A
W
A
W
1 2 1
4 4
4
1
2
CASE 369AA CASE 369AC CASE 369D
DPAK 3 IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Pulsed Drain t p =10 m s
Current
Current Limited by Package
T A = 25 ° C
T A = 25 ° C
I DM
I DmaxPkg
98
35
A
A
4
Drain
4
Drain
4
Drain
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T J ,
T STG
I S
dV/dt
--55 to
+175
30.5
6
° C
A
V/ns
1
2
3
Source Gate Drain Source
1
2
3
Single Pulse Drain--to--Source Avalanche EAS 60.5 mJ
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 11 A pk , L = 1.0 mH, R G = 25 Ω )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate
Gate Drain Source
Y = Year
WW = Work Week
4863N = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 2
1
Publication Order Number:
NTD4863N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4863NT4G | 功能描述:MOSFET NFET 25V 49A 0.0093R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4865N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK |
| NTD4865N-1G | 功能描述:MOSFET PWR MSFT 25V 44A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4865N-35G | 功能描述:MOSFET PWR MSFT 25V 44A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4865NT4G | 功能描述:MOSFET PWR MSFT 25V 44A SINGLE N-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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