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| 型号： | NTD4906NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 10.3A SGL DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1932pF @ 15V |
| 功率 - 最大： | 1.38W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD4906NT4GOSDKR |
NTD4906N
Power MOSFET
30 V, 54 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
5.5 m W @ 10 V
8.0 m W @ 4.5 V
D
I D MAX
54 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
" 20
V
V
G
N ? Channel
Continuous Drain
Current (R q JA )
(Note 1)
T A = 25 ° C
T A = 100 ° C
I D
14
9.9
A
S
Power Dissipation
(R q JA ) (Note 1)
T A = 25 ° C
P D
2.6
W
4
4
4
1
2 3
3
Continuous Drain
Current (R q JA ) (Note
2)
Power Dissipation
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C = 100 ° C
I D
P D
I D
10.3
7.3
1.38
54
38
A
W
A
1 2
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1
2
CASE 369AD CASE 369D
IPAK IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Power Dissipation T C = 25 ° C
(R q JC ) (Note 1)
Pulsed Drain Current t p =10 m s T A = 25 ° C
Current Limited by Package T A = 25 ° C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
P D
I DM
I DmaxPkg
T J , T stg
I S
dV/dt
37.5
223
90
? 55 to
175
32
6.5
W
A
A
° C
A
V/ns
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain
1
2
3
Source Gate Drain Source
1
2
3
Single Pulse Drain ? to ? Source Avalanche E AS 48 mJ
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
L = 0.1 mH, I L(pk) = 31 A, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate
Gate Drain Source
A = Assembly Location
Y = Year
WW = Work Week
4906N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
October, 2013 ? Rev. 5
1
Publication Order Number:
NTD4906N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4909N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK |
| NTD4909N-1G | 功能描述:MOSFET NFET DPAK 30V 41A 8.0 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4909N-35G | 功能描述:MOSFET NFET DPAK 30V 41A 8.0 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4909NA-1G | 功能描述:MOSFET NFET DPAK 30V 41A 8 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4909NA-35G | 功能描述:MOSFET NFET DPAK 30V 41A 8 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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