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参数资料
| 型号： | NTD4913NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 32A DPAK |
| 产品变化通告： | Reactivation Notice 08/Apr/2011 Product Discontinuation 27/Jan/2012 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1013pF @ 15V |
| 功率 - 最大： | 1.36W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD4913N
Power MOSFET
30 V, 32 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
Applications
? CPU Power Delivery
? DC ? DC Converters
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
10.5 m W @ 10 V
15 m W @ 4.5 V
I D MAX
32 A
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G
2 3
3
3
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T A = 25 ° C
I D
P D
I D
P D
I D
P D
I DM
10.5
7.4
2.5
7.7
5.4
1.36
32
23
24
132
A
W
A
W
A
W
A
1 2 1
STYLE 2 DPAK)
S
N ? CHANNEL MOSFET
4 4
4
1
2
CASE 369AA CASE 369AC CASE 369D
DPAK 3 IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
MARKING DIAGRAMS
Current Limited by Package
T A = 25 ° C
I DmaxPkg
60
A
& PIN ASSIGNMENTS
Operating Junction and Storage
Temperature
Source Current (Body Diode)
T J ,
T STG
I S
? 55 to
+175
20
° C
A
4
Drain
4
Drain
4
Drain
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 21 A pk , L = 0.1 mH, R G = 25 W)
dV/dt
EAS
8.0
22
V/ns
mJ
1
2
3
Source Gate Drain Source
1
2
3
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
2
1 Drain 3
Gate
Y = Year
WW = Work Week
4913N = Device Code
Gate Drain Source
G
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 ? Rev. 1
1
Publication Order Number:
NTD4913N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4959N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK |
| NTD4959N-1G | 功能描述:MOSFET NFET DPAK 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4959N-35G | 功能描述:MOSFET NFET DPAK 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4959NH | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK |
| NTD4959NH-1G | 功能描述:MOSFET NFET DPAK 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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