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| 型号： | NTD4965NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 68A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.7 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1710pF @ 15V |
| 功率 - 最大： | 1.39W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD4965N
Power MOSFET
30 V, 68 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Three Package Variations for Design Flexibility
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
4.7 m W @ 10 V
10 m W @ 4.5 V
D
I D MAX
68 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
G
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 100 ° C
V GS
I D
± 20
17.8
12.6
V
A
S
N ? CHANNEL MOSFET
Power
Dissipation R q JA
(Note 1)
T A = 25 ° C
P D
2.6
W
4
4
4
1
2 3
3
Continuous Drain
Current R q JA
(Note 2)
Power
Dissipation R q JA
(Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C = 100 ° C
I D
P D
I D
13.0
9.2
1.39
68
48
A
W
A
1 2
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1
2
CASE 369AC CASE 369D
3 IPAK IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Power
Dissipation R q JC
(Note 1)
Pulsed Drain t p =10 m s
Current
Current Limited by Package
T C = 25 ° C
T A = 25 ° C
T A = 25 ° C
P D
I DM
I DmaxPkg
38.5
248
76
W
A
A
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain
Operating Junction and Storage
Temperature
Source Current (Body Diode)
T J ,
T STG
I S
? 55 to
+175
35
° C
A
1
2
3
Source Gate Drain Source
1
2
3
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L = 31 A pk , L = 0.1 mH, R G = 25 W)
dV/dt
EAS
6.0
47
V/ns
mJ
2
1 Drain 3
Gate
Gate Drain Source
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
Y
= Year
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
WW = Work Week
4965N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
August, 2012 ? Rev. 2
1
Publication Order Number:
NTD4965N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4969N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 41 A, Single N?Channel, DPAK/IPAK CPU Power Delivery |
| NTD4969N-1G | 功能描述:MOSFET TRENCH 3.1 30V 9 mOhm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4969N-35G | 功能描述:MOSFET TRENCH 3.1 30V 9 mOhm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4969NT4G | 功能描述:MOSFET TRENCH 3.1 30V 9 mOhm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4970N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 36 A, Single Na??Channel, DPAK/IPAK |
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