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参数资料
| 型号： | NTD5802NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 16.4A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 16.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.4 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5025pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD5802N, NVD5802N
Power MOSFET
40 V, Single N ? Channel, 101 A DPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? MSL 1/260 ° C
? AEC Q101 Qualified
? 100% Avalanche Tested
? AEC Q101 Qualified ? NVD5802N
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
40 V
http://onsemi.com
R DS(on)
4.4 m W @ 10 V
7.8 m W @ 5.0 V
D
I D
101 A
50 A
Applications
? CPU Power Delivery
? DC ? DC Converters
? Motor Driver
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
N ? Channel
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
40
" 20
V
V
4
Continuous Drain Cur-
rent (R q JC ) (Note 1)
T C = 25 ° C
T C = 85 ° C
I D
101
78
A
1 2
3
Power Dissipation
(R q JC ) (Note 1)
Continuous Drain Cur-
rent (R q JA ) (Note 1)
Steady
State
T C = 25 ° C
T A = 25 ° C
T A = 85 ° C
P D
I D
93.75
16.4
12.7
W
A
CASE 369C
DPAK
(Bent Lead)
STYLE 2
Power Dissipation
(R q JA ) (Note 1)
Pulsed Drain Current t p =10 m s
Current Limited by Package
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
P D
I DM
I DmaxPkg
2.5
300
45
W
A
A
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
175
50
° C
A
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche En-
ergy (V DD = 32 V, V GS = 10 V,
L = 0.3 mH, I L(pk) = 40 A, R G = 25 W )
dV/dt
E AS
6.0
240
V/ns
mJ
2
1 Drain 3
Gate Source
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
WW
5802N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 6
1
Publication Order Number:
NTD5802N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5803N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 76 A, Single N−Channel, DPAK |
| NTD5803NG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 76 A, Single N−Channel, DPAK |
| NTD5803NT4G | 功能描述:MOSFET NFET DPAK 40V 75A 7.4mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5804N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 69 A, Single N−Channel, DPAK |
| NTD5804NG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 69 A, Single N−Channel, DPAK |
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