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| 型号： | NTD5807NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 23A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 23A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 31 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 603pF @ 25V |
| 功率 - 最大： | 33W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD5807N, NVD5807N
Power MOSFET
40 V, 23 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? AEC ? Q101 Qualified and PPAP Capable ? NVD5807N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CCFL Backlight
? DC Motor Control
? Class D Amplifier
? Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
40 V
G
http://onsemi.com
R DS(on) MAX
37 m W @ 4.5 V
31 m W @ 10 V
D
I D MAX
16 A
23 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Gate ? to ? Source Voltage
? Non ? Repetitive (t p < 10 m S)
V DSS
V GS
V GS
40
" 20
" 30
V
V
V
S
N ? CHANNEL MOSFET
4
4
Current (R q JC )
3
CASE 369AA
(Surface Mount)
STYLE 2
Continuous Drain T C = 25 ° C
(Note 1) Steady T C = 100 ° C
State
Power Dissipation T C = 25 ° C
(R q JC ) (Note 1)
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
I D
P D
I DM
T J , T stg
I S
23
16
33
45
? 55 to
175
23
A
W
A
° C
A
1 2
3 1
2
DPAK
IPAK
CASE 369D
(Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENT
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V, R G = 25 W ,
I L(pk) = 14 A, L = 0.3 mH, V DS = 40 V)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
E AS
T L
29.4
260
mJ
° C
4
Drain
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Junction ? to ? Case (Drain) R q JC 4.5 ° C/W
Junction ? to ? Ambient ? Steady State (Note 1) R q JA 107
1. Surface ? mounted on FR4 board using the minimum recommended pad size.
Y
WW
5807N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 4
1
Publication Order Number:
NTD5807N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5862N-1G | 功能描述:MOSFET NFET IPAK 60V 102A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5862NT4G | 功能描述:MOSFET NFET DPAK 60V 102A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5865N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 60 V, 38 A, 18 m |
| NTD5865N-1G | 功能描述:MOSFET Single N-CH 60V 38A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5865NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 60 V, 40 A, 16 mΩ |
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