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参数资料
| 型号： | NTD5862NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 90A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.7 毫欧 @ 45A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 82nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6000pF @ 25V |
| 功率 - 最大： | 115W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTD5862NT4G-ND NTD5862NT4GOSTR |
NTD5862N, NTP5862N
N-Channel Power MOSFET
60 V, 98 A, 5.7 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
5.7 m W @ 10 V
D
I D MAX
98 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
60
Unit
V
Gate ? to ? Source Voltage ? Continuous
Gate ? to ? Source Voltage
? Non ? Repetitive (t p < 10 m s)
V GS
V GS
" 20
" 30
V
V
G
Continuous Drain Cur-
rent (R q JC ) (Note 1)
Power Dissipation
(R q JC )
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
98
69
115
A
W
S
N ? CHANNEL MOSFET
4
4
Pulsed Drain Current
t p = 10 m s
I DM
335
A
4
3
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J , T stg
I S
E AS
T L
? 55 to
175
96
205
260
° C
A
mJ
° C
1 2
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
DPAK
CASE 369D
(Straight Lead)
STYLE 2
1
2
3
TO ? 220AB
CASE 221A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENT
STYLE 5
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Case (Drain)
R q JC
Value
1.3
Unit
° C/W
4
Drain
4
Drain
4
Drain
Junction ? to ? Ambient ? Steady State (Note 2) R q JA
1. Limited by package to 50 A continuous.
2. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
37
2
1 Drain 3
Gate Source
1
Gate
1 2 3
Gate Drain Source
NTP
5862NG
AYWW
2
3
Source
A
Y
WW
5862N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb ? Free Package
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 2
1
Publication Order Number:
NTD5862N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5865N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 60 V, 38 A, 18 m |
| NTD5865N-1G | 功能描述:MOSFET Single N-CH 60V 38A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5865NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 60 V, 40 A, 16 mΩ |
| NTD5865NL-1G | 功能描述:MOSFET Single N-CH 60V 40A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5865NLT4G | 功能描述:MOSFET Single N-CH 60V 40A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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