- 您现在的位置：买卖IC网 > Datasheet目录488 > NTD5867NL-1G (ON Semiconductor)MOSFET N-CH 60V 18A 43MOHM IPAK Datasheet资料下载
参数资料
| 型号： | NTD5867NL-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 18A 43MOHM IPAK |
| 产品目录绘图： | MOSFET IPAK-3 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 675pF @ 25V |
| 功率 - 最大： | 36W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD5867NL-1G-ND NTD5867NL-1GOS |
NTD5867NL
N-Channel Power MOSFET
60 V, 20 A, 39 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
http://onsemi.com
R DS(on) MAX
I D MAX
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Gate ? to ? Source Voltage ? Continuous
V GS
Gate ? to ? Source Voltage
V GS
? Non ? Repetitive (t p < 10 m s)
Value
60
" 20
" 30
Unit
V
V
V
60 V
39 m W @ 10 V
50 m W @ 4.5 V
D
20 A
18 A
T C = 25 ° C
Continuous Drain
Current (R q JC )
Power Dissipation
(R q JC )
Pulsed Drain Current
T C = 25 ° C
Steady T C = 100 ° C
State
t p = 10 m s
I D
P D
I DM
20
13
36
76
A
W
A
G
S
N ? CHANNEL MOSFET
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
150
20
° C
A
4
4
3
CASE 369AA
(Surface Mount)
STYLE 2
Single Pulse Drain ? to ? Source Avalanche E AS 18 mJ
Energy (V DD = 50 V, V GS = 10 V, R G = 25 W ,
I L(pk) = 19 A, L = 0.1 mH, T J = 25 ° C)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1 2
3 1
2
DPAK
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Case (Drain) R q JC
Junction ? to ? Ambient ? Steady State (Note 1)
R q JA
Value
3.5
45
Unit
° C/W
& PIN ASSIGNMENT
4
4 Drain
Drain
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Y = Year
WW = Work Week
5867NL = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
September, 2013 ? Rev. 2
1
Publication Order Number:
NTD5867NL/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTD60N02RT4 | MOSFET N-CH 25V 8.5A DPAK |
| NTD6414ANT4G | MOSFET N-CH 100V 32A DPAK |
| NTD6415ANLT4G | MOSFET N-CH 100V 23A 56MOHM DPAK |
| NTD6415ANT4G | MOSFET N-CH 100V 23A DPAK |
| NTD6416AN-1G | MOSFET N-CH 100V 17A IPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5867NLT4G | 功能描述:MOSFET NFET DPAK 60V 18A 43 MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5N50 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述: |
| NTD5N50/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 5 Amps， 500 Volts |
| NTD5N50-001 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD5N50T4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。