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参数资料
| 型号： | NTD5805NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 51A DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 51A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1725pF @ 25V |
| 功率 - 最大： | 47W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTD5805NT4GOSDKR |
NTD5805N, NVD5805N
Power MOSFET
40 V, 51 A, Single N ? Channel, DPAK
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
V (BR)DSS
http://onsemi.com
R DS(on) MAX
I D MAX
?
Qualified and PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
40 V
16 m W @ 5.0 V
9.5 m W @ 10 V
51 A
Applications
? LED Backlight Driver
? CCFL Backlight
? DC Motor Control
? Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
D
S
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
40
" 20
Unit
V
V
N ? CHANNEL MOSFET
4
Current (R q JC )
Gate ? to ? Source Voltage
? Non ? Repetitive (t p < 10 m S)
Continuous Drain
(Note 1) Steady
State
Power Dissipation
(R q JC ) (Note 1)
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
V GS
I D
P D
" 30
51
36
47
V
A
W
1 2
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V, R G = 25 W ,
I L(pk) = 40 A, L = 0.1 mH, V DS = 40 V)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I DM
T J , T stg
I S
E AS
T L
85
? 55 to
175
30
80
260
A
° C
A
mJ
° C
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate Source
THERMAL RESISTANCE MAXIMUM RATINGS
Y
= Year
Parameter
Junction ? to ? Case (Drain)
Symbol
R q JC
Value
3.2
Unit
° C/W
WW
5805N
G
= Work Week
= Device Code
= Pb ? Free Package
Junction ? to ? Ambient ? Steady State (Note 1)
R q JA
107
1. Surface ? mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
April, 2012 ? Rev. 4
1
Publication Order Number:
NTD5805N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTD5806NT4G | MOSFET N-CH 40V 33A DPAK |
| NTD5807NT4G | MOSFET N-CH 40V 23A DPAK |
| NTD5862NT4G | MOSFET N-CH 60V 90A DPAK |
| NTD5865N-1G | MOSFET N-CH 60V 34A 18MOHM DPAK |
| NTD5865NL-1G | MOSFET N-CH 60V 40A 16MOHM IPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5806N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK |
| NTD5806NG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK |
| NTD5806NT4G | 功能描述:MOSFET NFET DPAK 40V 33A 19mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5807N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK |
| NTD5807NG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK |
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