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参数资料
| 型号： | NTD5803NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 76A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 76A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.2 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 51nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3220pF @ 25V |
| 功率 - 最大： | 83W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD5803N
Power MOSFET
40 V, 76 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? These are Pb ? Free Devices
Applications
? CCFL Backlight
? DC Motor Control
? Class D Amplifier
? Power Supply Secondary Side Synchronous Rectification
V (BR)DSS
40 V
http://onsemi.com
R DS(on) MAX
10.1 m W @ 5.0 V
7.2 m W @ 10 V
D
I D MAX
54 A
76 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
40
" 20
V
V
S
N ? CHANNEL MOSFET
Current (R q JC )
3
Gate ? to ? Source Voltage
? Non ? Repetitive (t p < 10 m S)
Continuous Drain T C = 25 ° C
(Note 1) Steady T C = 100 ° C
State
Power Dissipation T C = 25 ° C
(R q JC ) (Note 1)
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
V GS
I D
P D
I DM
T J , T stg
" 30
76
54
83
228
? 55 to
175
V
A
W
A
° C
4
1 2
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
4
1
2
IPAK
CASE 369D
(Straight Lead
DPAK)
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V, R G = 25 W ,
I L(pk) = 40 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
E AS
T L
76
240
260
A
mJ
° C
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
4 Drain
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Case (Drain) R q JC
Value
1.8
Unit
° C/W
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Junction ? to ? Ambient ? Steady State (Note 1) R q JA
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
64
Y
WW
5803N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
March, 2011 ? Rev. 3
1
Publication Order Number:
NTD5803N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5804N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 69 A, Single N−Channel, DPAK |
| NTD5804NG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 69 A, Single N−Channel, DPAK |
| NTD5804NT4G | 功能描述:MOSFET NFET DPAK 40V 69A 8.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5805N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N−Channel, DPAK |
| NTD5805N_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N.Channel, DPAK |
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