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参数资料
| 型号： | NTD5802NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 16.4A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 16.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.4 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5025pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD5802N, NVD5802N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? Steady State (Note 2)
Symbol
R q JC
R q JA
R q JA
Value
1.6
60
105
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 10 m A
40
40
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 40 V
T J = 25 ° C
T J = 150 ° C
1.0
50
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
? 7.4
3.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 50 A
3.6
4.4
m W
V GS = 5.0 V, I D = 50 A
6.5
7.8
Forward Transconductance
gFS
V DS = 15 V, I D = 15 A
16.8
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
5300
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 12 V
850
550
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
5025
580
400
pF
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 15 V,
I D = 50 A
75
6.0
18
15
100
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
14
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 20 V,
I D = 50 A, R G = 2.0 W
52
39
8.5
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关代理商/技术参数 |
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| NTD5803N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 76 A, Single N−Channel, DPAK |
| NTD5803NG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 76 A, Single N−Channel, DPAK |
| NTD5803NT4G | 功能描述:MOSFET NFET DPAK 40V 75A 7.4mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5804N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 69 A, Single N−Channel, DPAK |
| NTD5804NG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 69 A, Single N−Channel, DPAK |
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