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参数资料
| 型号： | NTD5414NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 24A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 24A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 24A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 48nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 25V |
| 功率 - 最大： | 55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD5414N, NVD5414N
Power MOSFET
24 Amps, 60 Volts Single N ? Channel
DPAK
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? AEC Q101 Qualified ? NVD5414N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? LED Lighting and LED Backlight Drivers
? DC ? DC Converters
? DC Motor Drivers
? Power Supplies Secondary Side Synchronous Rectification
V (BR)DSS
60 V
http://onsemi.com
R DS(ON) MAX
37 m W @ 10 V
N ? Channel
D
G
I D MAX
(Note 1)
24 A
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
60
Unit
V
S
1
3
Gate
Source
Gate ? to ? Source Voltage ? Continuous
Gate ? to ? Source Voltage ? Nonrepetitive
(T P < 10 m s)
Continuous Drain Steady T C = 25 ° C
Current R q JC State
(Note 1) T C = 100 ° C
Power Dissipation Steady T C = 25 ° C
R q JC (Note 1) State
Pulsed Drain Current t p = 10 m s
Operating and Storage Temperature Range
V GS
V GS
I D
P D
I DM
T J , T stg
$ 20
$ 30
24
16
55
75
? 55 to
+175
V
V
A
W
A
° C
1 2
3
4
DPAK
CASE 369AA
STYLE 2
MARKING
DIAGRAMS
4
Drain
2
Drain
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 V dc , V GS = 10 V, I L(pk) = 24 A,
L = 0.3 mH, R G = 25 W )
I S
E AS
24
86.4
A
mJ
5414N
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Device
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
T L
260
° C
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Parameter
Junction ? to ? Case (Drain) Steady State
(Note 1)
Symbol
R q JC
R q JA
Max
2.7
58.6
Unit
° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 1
1
Publication Order Number:
NTD5414N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD560 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220 |
| NTD565 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 8A I(C) | TO-3 |
| NTD568 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB |
| NTD569 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| NTD5802N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, Single N−Channel, 101 A DPAK |
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