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| 型号： | NTD50N03RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 7.8A DPAK |
| 产品变化通告： | Product Obsolescence 30/Sept/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 30A，11.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 11.5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 12V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD50N03R
Power MOSFET
25 V, 45 A, Single N?Channel, DPAK
Features
? Planar Technology
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Pb?Free Packages are Available
Applications
? VCORE DC?DC Buck Converter Applications
? Optimized for High Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
25 V
http://onsemi.com
R DS(on) TYP
12.5 m W @ 10 V
19 m W @ 4.5 V
N?Channel
D
I D MAX
45 A
Parameter
Drain?to?Source Voltage
Symbol
V DSS
Value
25
Unit
V
Gate?to?Source Voltage
V GS
" 20
V
G
Continuous Drain
Current (R q JA )
(Note 1)
T A = 25 ° C
T A = 85 ° C
I D
9.2
7.2
A
S
Power Dissipation
(R q JA ) (Note 1)
Continuous Drain
T A = 25 ° C
T A = 25 ° C
P D
I D
2.1
7.8
W
A
4
4
4
Current (R q JA )
(Note 2)
Steady
T A = 85 ° C
6.0
1 2
Power Dissipation
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Power Dissipation
State
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
P D
I D
P D
1.5
45
35
50
W
A
W
3 1 1
2 2 3
3
CASE 369AA CASE 369D CASE 369AC
DPAK DPAK 3 IPAK
(Surface Mount) (Straight Lead) (Straight Lead)
STYLE 2 STYLE 2
(R q JC ) (Note 1)
Pulsed Drain Current
Current Limited by
Package
T A = 25 ° C,
t p = 10 m s
T A = 25 ° C
I DM
I DmaxPkg
180
45
A
A
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain?to?Source (dv/dt)
T J , T stg
I S
dv/dt
?55 to
175
45
8.0
° C
A
V/ns
4
Drain
Single Pulse Drain?to?Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 6.32 A pk , L = 1.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
E AS
T L
20
260
mJ
° C
1
Gate
2
Drain
3
Source
1
Gate
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface?mounted on FR4 board using 1 sq in pad, 1 oz Cu.
Y
WW
T50N03R
G
= Year
= Work Week
= Device Code
= Pb?Free Package
2. Surface?mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
March, 2007 ? Rev. 4
1
Publication Order Number:
NTD50N03R/D
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| NTD5406N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 70 A, Single N−Channel, DPAK |
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| NTD5406NT4G | 功能描述:MOSFET NFET 40V HD3E RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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