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| 型号： | NTD50N03RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 7.8A DPAK |
| 产品变化通告： | Product Obsolescence 30/Sept/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 30A，11.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 11.5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 12V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD50N03R
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC?01
ISSUE O
B
C
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
V
R
E
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
A
DIM
INCHES
MIN MAX
MILLIMETERS
MIN MAX
SEATING PLANE
W
K
A
B
C
0.235 0.245
0.250 0.265
0.086 0.094
5.97 6.22
6.35 6.73
2.19 2.38
F
G
D
3 PL
J
H
D
E
F
G
H
J
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.69 0.88
0.46 0.58
0.94 1.09
2.29 BSC
0.87 1.01
0.46 0.58
0.13 (0.005) W
K
R
V
W
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
3.40 3.60
4.57 5.46
0.89 1.27
0.000 0.25
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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NTD50N03R/D
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