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参数资料
| 型号： | NTD5413NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A DPAK |
| 产品变化通告： | Reactivation Notice 28/Jun/2011 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1725pF @ 25V |
| 功率 - 最大： | 68W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD5413N
Power MOSFET
30 Amps, 60 Volts Single N ? Channel
DPAK
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? These are Pb ? Free Devices
Applications
? LED Lighting and LED Backlight Drivers
? DC ? DC Converters
? DC Motor Drivers
? Switch Mode Power Supplies
? Power Supplies Secondary Side Synchronous Rectification
V (BR)DSS
60 V
http://onsemi.com
R DS(ON) MAX
26 m W @ 10 V
N ? Channel
D
I D MAX
(Note 1)
30 A
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
60
$ 20
Unit
V
V
G
S
Gate ? to ? Source Voltage ? Nonrepetitive
(T P < 10 m s)
Continuous Drain Steady T C = 25 ° C
Current R q JC State
(Note 1) T C = 100 ° C
Power Dissipation Steady T C = 25 ° C
R q JC (Note 1) State
V GS
I D
P D
$ 30
30
23
68
V
A
W
4
DPAK
MARKING
DIAGRAM
4
Drain
1
Gate
Pulsed Drain Current t p = 10 m s
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 V dc , V GS = 10 V, I L(pk) = 30 A,
L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
I DM
T J , T stg
I S
E AS
T L
84
? 55 to
+175
30
135
260
A
° C
A
mJ
° C
1 2
3
CASE 369AA
STYLE 2
5413N = Device Code
Y = Year
WW = Work Week
G = Pb ? Free Device
2
Drain
3
Source
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Case (Drain) Steady State
(Note 1)
Symbol
R q JC
R q JA
Max
2.2
58.5
Unit
° C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
? Semiconductor Components Industries, LLC, 2008
October, 2008 ? Rev. 0
1
Publication Order Number:
NTD5413N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5414N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK |
| NTD5414NT4G | 功能描述:MOSFET 30A, 60V, 42mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD560 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220 |
| NTD565 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 8A I(C) | TO-3 |
| NTD568 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB |
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