参数资料
型号: NTD5413NT4G
厂商: ON Semiconductor
文件页数: 4/6页
文件大小: 0K
描述: MOSFET N-CH 60V 30A DPAK
产品变化通告: Reactivation Notice 28/Jun/2011
标准包装: 2,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 30A
开态Rds(最大)@ Id, Vgs @ 25° C: 26 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 46nC @ 10V
输入电容 (Ciss) @ Vds: 1725pF @ 25V
功率 - 最大: 68W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
NTD5413N
TYPICAL PERFORMANCE CURVES
2500
2000
V GS = 0 V
T J = 25 ° C
10
8
Q T
1500
C iss
6
Q 1
Q 2
1000
4
500
0
0
C rss
10
20
30
40
C oss
50
60
2
0
0
5
10
15
20
25
30
I D = 20 A
T J = 25 ° C
35
40
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source Voltage vs. Total
Charge
1000
V DD = 48 V
I D = 20 A
V GS = 10 V
40
V GS = 0 V
T J = 25 ° C
100
t d(off)
t r
30
10
t f
t d(on)
20
10
1
1
10
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1000
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
140
V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
0 V ≤ V GS ≤ 10 V
Single Pulse
120
I D = 30 A
100
T C = 25 ° C
10 ms
1 ms
100 m s
10 m s
100
10
1
dc
R DS(on) Limit
Thermal Limit
80
60
40
20
0.1
0.1
Package Limit
1
10
100
0
25
50
75
100
125
150
175
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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