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| 型号： | NTD5413NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A DPAK |
| 产品变化通告： | Reactivation Notice 28/Jun/2011 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1725pF @ 25V |
| 功率 - 最大： | 68W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD5413N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Temper-
ature Coefficient
V (BR)DSS
V (BR)DSS /T J
V DS = 0 V, I D = 250 m A
60
67.5
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V
T J = 25 ° C
T J = 150 ° C
1.0
50
m A
Gate ? Body Leakage Current
I GSS
V DS = 0 V, V GS = $ 20 V
$ 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(th)
V GS = V DS , I D = 250 m A
2.0
3.4
4.0
V
Negative Threshold Temperature Coefficient
V GS(th) /T J
7.9
mV/ ° C
Drain ? to ? Source On ? Voltage
V DS(on)
V GS = 10 V, I D = 20 A
0.37
0.52
V
V GS = 10 V, I D = 20 A, 150 ° C
0.86
Drain ? to ? Source On ? Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 10 V, I D = 20 A
V DS = 15 V, I D = 20 A
18.5
36
26
m W
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
C iss
C oss
V DS = 25 V, V GS = 0 V,
f = 1 MHz
1160
240
1725
pF
Transfer Capacitance
C rss
100
Total Gate Charge
Threshold Gate Charge
Q G(TOT)
Q G(TH)
V GS = 10 V, V DS = 48 V,
I D = 20 A
35
1.4
46
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
6.5
16.1
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V GS = 10 V, V DD = 48 V,
I D = 20 A, R G = 2.5 W
11
20
28
8.0
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 2)
V SD
V GS = 0 V
I S = 20 A
T J = 25 ° C
T J = 125 ° C
0.87
0.8
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
t rr
t a
t b
Q RR
I S = 20 A dc , V GS = 0 V dc ,
dI S /dt = 100 A/ m s
52
37
15
105.7
ns
nC
2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
NTD5413NT4G
Device
Package
DPAK
(Pb ? Free)
Shipping ?
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
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| NTD5414N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK |
| NTD5414NT4G | 功能描述:MOSFET 30A, 60V, 42mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD560 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220 |
| NTD565 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 8A I(C) | TO-3 |
| NTD568 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB |
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