- 您现在的位置：买卖IC网 > PDF目录18058 > NTD4909N-35G (ON Semiconductor)MOSFET N-CH 30V 41A SGL IPAK PDF资料下载
参数资料
| 型号： | NTD4909N-35G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 41A SGL IPAK |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1314pF @ 15V |
| 功率 - 最大： | 1.37W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短截引线，IPak |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD4909N
Power MOSFET
30 V, 41 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
Applications
? CPU Power Delivery
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
8.0 m W @ 10 V
12 m W @ 4.5 V
D
I D MAX
41 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
" 20
V
V
G
N ? Channel
Continuous Drain
Current (R q JA )
(Note 1)
T A = 25 ° C
T A = 100 ° C
I D
12.1
8.6
A
S
Power Dissipation
(R q JA ) (Note 1)
T A = 25 ° C
P D
2.6
W
4
4
1 2 1
2 3
3
3
4
4
1
2
3
Source Gate Drain Source
1
2
3
Continuous Drain T A = 25 ° C
Current (R q JA )
(Note 2) Steady T A = 100 ° C
State
Power Dissipation T A = 25 ° C
(R q JA ) (Note 2)
Continuous Drain T C = 25 ° C
Current (R q JC )
(Note 1) T C = 100 ° C
Power Dissipation T C = 25 ° C
(R q JC ) (Note 1)
Pulsed Drain Current t p =10 m s T A = 25 ° C
Current Limited by Package T A = 25 ° C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
L = 0.1 mH, I L(pk) = 24 A, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I D
P D
I D
P D
I DM
I DmaxPkg
T J , T stg
I S
dV/dt
E AS
T L
8.8
6.2
1.37
41
29
29.4
167
60
? 55 to
175
27
7.0
28
260
A
W
A
W
A
A
° C
A
V/ns
mJ
° C
4
1
2
CASE 369AA CASE 369AD CASE 369D
DPAK IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain Drain
2
1 Drain 3
Gate
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
Y
WW
4909N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 ? Rev. 2
1
Publication Order Number:
NTD4909N/D
相关PDF资料 |
PDF描述 |
|---|---|
| 5-1437580-0 | MSSA211NGRA=DP SLIDE W/ RA TER |
| FD1220016 | OSC 12.288MHZ 3.3V SMD |
| ASF42G04 | SWITCH SLIDE 4PDT 2POS WHITE T/H |
| 2TL1-5M | SWITCH TOGGLE TL ON-OFF-MOM DPDT |
| MSSA101EGRA | SWITCH SLIDE 3POS R/A BL MSSA-01 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4909NA-1G | 功能描述:MOSFET NFET DPAK 30V 41A 8 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4909NA-35G | 功能描述:MOSFET NFET DPAK 30V 41A 8 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4909NAT4G | 功能描述:MOSFET NFET DPAK 30V 41A 8.0 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4909NAT4H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTD4909NT4G | 功能描述:MOSFET NFET DPAK 30V 41A 8.0 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。