参数资料
型号: NTD60N02RT4G
厂商: ON Semiconductor
文件页数: 8/8页
文件大小: 0K
描述: MOSFET N-CH 62A 25V DPAK
产品变化通告: Product Obsolescence 07/Jul/2010
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 8.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 10.5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 14nC @ 4.5V
输入电容 (Ciss) @ Vds: 1330pF @ 20V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 剪切带 (CT)
其它名称: NTD60N02RT4GOSCT
NTD60N02R
PACKAGE DIMENSIONS
DPAK
CASE 369D?01
ISSUE B
B
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
V
R
E
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
1
4
2
3
A
Z
DIM
A
B
C
INCHES
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
D
0.027 0.035
0.69 0.88
?T?
E
F
0.018 0.023
0.037 0.045
0.46 0.58
0.94 1.14
SEATING
PLANE
K
G
H
J
K
R
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
F
D
3 PL
J
H
S
V
Z
0.025 0.040
0.035 0.050
0.155 ???
0.63 1.01
0.89 1.27
3.93 ???
G
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NTD60N02R/D
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