参数资料
型号: NTD65N03R
厂商: ON Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: MOSFET N-CH 25V 9.5A DPAK
产品变化通告: LTB Notification
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 9.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.4 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 16nC @ 5V
输入电容 (Ciss) @ Vds: 1400pF @ 20V
功率 - 最大: 1.3W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 管件
NTD65N03R
ORDERING INFORMATION
Order Number
NTD65N03R
NTD65N03RG
NTD65N03RT4
NTD65N03RT4G
NTD65N03R?1
NTD65N03R?1G
NTD65N03R?35
NTD65N03R?35G
Package
DPAK?3
DPAK?3
(Pb?Free)
DPAK?3
DPAK?3
(Pb?Free)
DPAK?3 Straight Lead
DPAK?3 Straight Lead
(Pb?Free)
DPAK Straight Lead Trimmed
(3.5 ± 0.15 mm)
DPAK Straight Lead Trimmed
(3.5 ± 0.15 mm)
Shipping ?
75 Units / Rail
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
75 Units / Rail
75 Units / Rail
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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相关代理商/技术参数
参数描述
NTD65N03R-001 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD65N03R-035 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD65N03R-1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 65 A, Single N-Channel, DPAK
NTD65N03R-1G 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD65N03R-35 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 65 A, Single N-Channel, DPAK